Temperature dependence of the average electron-hole pair creation energy in Al0.8Ga0.2As
نویسندگان
چکیده
منابع مشابه
MEASUREMENTS OF THE AVERAGE ENERGY PER ELECTRON-HOLE PAIR GENERATION IN SILICON BETWprEEN 5-32O0K(
The average energy exDended to create an electron-hole pair in silicon ESi(T) has been measured in the 5-3200K temperature range with thin totally depleted surface barrier and diffused junction radiation detectors. The data have been normalized to a value of ESi (3000K) = 3.62 eV. A dependence of ESi on T much weaker than previously published by other authors has been observed. In the examined ...
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ژورنال
عنوان ژورنال: Applied Physics Letters
سال: 2013
ISSN: 0003-6951,1077-3118
DOI: 10.1063/1.4804989